Electron transport through silicon serial triple quantum dots

Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, Ken Uchida, Shunri Oda

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2 K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is confirmed by equivalent circuit simulations, which show an excellent agreement with the experimental results. With detailed analysis of the charge configurations in the TQDs, we discuss the distinct properties of the TQDs, including electron transport at the charge quadruple points. In addition, we discuss higher order tunneling processes of the TQDs. The analysis of electron states in the silicon TQDs is a crucial step toward the future implementation of integrated silicon quantum information devices.

本文言語English
ページ(範囲)779-785
ページ数7
ジャーナルSolid-State Electronics
53
7
DOI
出版ステータスPublished - 2009 7月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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