Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio; Tomoki Nishino; Eiji Ohta; Makoto Sakata

doi:10.1016/0038-1101(81)90174-X

Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio
, Tomoki Nishino
, Eiji Ohta
, Makoto Sakata

物理情報工学科

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at E_c-0.226(±0.010)eV and E_v+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

本文言語	English
ページ（範囲）	1087-1091
ページ数	5
ジャーナル	Solid State Electronics
巻	24
号	12
DOI	https://doi.org/10.1016/0038-1101(81)90174-X
出版ステータス	Published - 1981 12月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
材料化学
電子工学および電気工学

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10.1016/0038-1101(81)90174-X

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abstract = "The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.",

author = "Takemitsu Kunio and Tomoki Nishino and Eiji Ohta and Makoto Sakata",

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AU - Kunio, Takemitsu

AU - Nishino, Tomoki

AU - Ohta, Eiji

AU - Sakata, Makoto

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N2 - The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

AB - The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

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Energy levels and degeneracy ratios for chromium in silicon

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