Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov; Y. Shiraki; T. Mouri; K. M. Itoh

doi:10.1016/j.tsf.2008.08.061

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, K. M. Itoh

物理情報工学科

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

本文言語	English
ページ（範囲）	359-361
ページ数	3
ジャーナル	Thin Solid Films
巻	517
号	1
DOI	https://doi.org/10.1016/j.tsf.2008.08.061
出版ステータス	Published - 2008 11月 3

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

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10.1016/j.tsf.2008.08.061

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title = "Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well",

abstract = "Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.",

keywords = "2DHG, Ge quantum well, MBE, Mobility",

author = "M. Myronov and Y. Shiraki and T. Mouri and Itoh, {K. M.}",

note = "Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007 and JSPS funding for young researchers 18760019.",

year = "2008",

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doi = "10.1016/j.tsf.2008.08.061",

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T1 - Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

AU - Myronov, M.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007 and JSPS funding for young researchers 18760019.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

AB - Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

KW - 2DHG

KW - Ge quantum well

KW - MBE

KW - Mobility

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DO - 10.1016/j.tsf.2008.08.061

M3 - Article

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SN - 0040-6090

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JO - Thin Solid Films

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IS - 1

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Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

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