Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography

Kyosuke Muramatsu; Hideaki Asakura; Keijiro Suzuki; Ken Tanizawa; Munehiro Toyama; Minoru Ohtsuka; Nobuyuki Yokoyama; Kazuyuki Matsumaro; Miyoshi Seki; Keiji Koshino; Kazuhiro Ikeda; Shu Namiki; Hitoshi Kawashima; Hiroyuki Tsuda

doi:10.1587/elex.12.20150019

Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography

Kyosuke Muramatsu, Hideaki Asakura, Keijiro Suzuki, Ken Tanizawa, Munehiro Toyama, Minoru Ohtsuka, Nobuyuki Yokoyama, Kazuyuki Matsumaro, Miyoshi Seki, Keiji Koshino, Kazuhiro Ikeda, Shu Namiki, Hitoshi Kawashima, Hiroyuki Tsuda

電気情報工学科

研究成果: Article › 査読

3 被引用数 (Scopus)

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The phase errors in 100-GHz spacing, 8-ch, Si-wire arrayedwaveguide gratings (AWG) fabricated by ArF-immersion photolithography were measured by the frequency-domain interference method. To our knowledge, this is the first time phase error measurements in a Si-wire AWG have been performed. By comparing the reconstructed transmission spectrum to the directly measured spectrum, the accuracy of this phase error measurement was confirmed. The average phase error in the AWGs on 6 chips was 0.27π radian, and this value is equivalent to a fluctuation in the effective refractive index of 1.1 × 10⁻⁴.

本文言語	English
論文番号	20150019
ジャーナル	IEICE Electronics Express
巻	12
号	7
DOI	https://doi.org/10.1587/elex.12.20150019
出版ステータス	Published - 2015 4月 10

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

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10.1587/elex.12.20150019

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Muramatsu, K., Asakura, H., Suzuki, K., Tanizawa, K., Toyama, M., Ohtsuka, M., Yokoyama, N., Matsumaro, K., Seki, M., Koshino, K., Ikeda, K., Namiki, S., Kawashima, H., & Tsuda, H. (2015). Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography. IEICE Electronics Express, 12(7), 記事 20150019. https://doi.org/10.1587/elex.12.20150019

Muramatsu, K, Asakura, H, Suzuki, K, Tanizawa, K, Toyama, M, Ohtsuka, M, Yokoyama, N, Matsumaro, K, Seki, M, Koshino, K, Ikeda, K, Namiki, S, Kawashima, H & Tsuda, H 2015, 'Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography', IEICE Electronics Express, vol. 12, no. 7, 20150019. https://doi.org/10.1587/elex.12.20150019

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abstract = "The phase errors in 100-GHz spacing, 8-ch, Si-wire arrayedwaveguide gratings (AWG) fabricated by ArF-immersion photolithography were measured by the frequency-domain interference method. To our knowledge, this is the first time phase error measurements in a Si-wire AWG have been performed. By comparing the reconstructed transmission spectrum to the directly measured spectrum, the accuracy of this phase error measurement was confirmed. The average phase error in the AWGs on 6 chips was 0.27π radian, and this value is equivalent to a fluctuation in the effective refractive index of 1.1 × 10−4.",

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AU - Muramatsu, Kyosuke

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AU - Tanizawa, Ken

AU - Toyama, Munehiro

AU - Ohtsuka, Minoru

AU - Yokoyama, Nobuyuki

AU - Matsumaro, Kazuyuki

AU - Seki, Miyoshi

AU - Koshino, Keiji

AU - Ikeda, Kazuhiro

AU - Namiki, Shu

AU - Kawashima, Hitoshi

AU - Tsuda, Hiroyuki

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AB - The phase errors in 100-GHz spacing, 8-ch, Si-wire arrayedwaveguide gratings (AWG) fabricated by ArF-immersion photolithography were measured by the frequency-domain interference method. To our knowledge, this is the first time phase error measurements in a Si-wire AWG have been performed. By comparing the reconstructed transmission spectrum to the directly measured spectrum, the accuracy of this phase error measurement was confirmed. The average phase error in the AWGs on 6 chips was 0.27π radian, and this value is equivalent to a fluctuation in the effective refractive index of 1.1 × 10−4.

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Evaluation of the phase error in Si-wire arrayed-waveguide gratings fabricated by ArF-immersion photolithography

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