Experimental Study of Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and Ultrathin-body SOI MOSFETs

Ken Uchida, Ricardo Zedník, Ching Huang Lu, Hemanth Jagannathan, James McVittie, Paul C. McLntyre, Yoshio Nishi

研究成果: Conference article査読

86 被引用数 (Scopus)

抄録

The biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body (UTB) SOI MOSFET with T SOI of less than 5nm were investigated. It was demonstrated that in bulk nMOSFETs, electron mobility enhancement is stronger in the order of biaxial tensile, <100> uniaxial tensile, and <100> uniaxial tensile strains. In bulk pMOSFET, hole mobility is stronger in the order of <110> uniaxial compressive, <100> uniaxial compressive, and biaxial tensile strains. It was shown that the uniaxial strain is effective to enhance both electron and hole mobility in UTB MOSFETs with T SOI of down to at least 2.5nm. The subband structure engineering in UTB MOSFETs can cooperate with strain engineering to enhance mobility.

本文言語English
ページ(範囲)229-232
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
出版ステータスPublished - 2004
外部発表はい
イベントIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
継続期間: 2004 12月 132004 12月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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