Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin Ichi Takagi

    研究成果: Conference article査読

    306 被引用数 (Scopus)

    抄録

    The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

    本文言語English
    ページ(範囲)47-50
    ページ数4
    ジャーナルTechnical Digest - International Electron Devices Meeting
    出版ステータスPublished - 2002 12月 1
    イベント2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
    継続期間: 2002 12月 82002 12月 11

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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