Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT SOI-induced Scattering

Ken Uchida; Junji Koga; Shin ichi Takagi

Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT _SOI-induced Scattering

Ken Uchida
, Junji Koga
, Shin ichi Takagi

研究成果: Conference article › 査読

抄録

The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.

本文言語	English
ページ（範囲）	805-808
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 2003
外部発表	はい
イベント	IEEE International Electron Devices Meeting - Washington, DC, United States 継続期間: 2003 12月 8 → 2003 12月 10

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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引用スタイル

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title = "Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT SOI-induced Scattering",

abstract = "The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.",

author = "Ken Uchida and Junji Koga and Takagi, \{Shin ichi\}",

year = "2003",

language = "English",

pages = "805--808",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs - Coulomb Scattering, Volume Inversion, and δT SOI-induced Scattering

AU - Uchida, Ken

AU - Koga, Junji

AU - Takagi, Shin ichi

PY - 2003

Y1 - 2003

N2 - The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.

AB - The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, mobility of double-gate structures is smaller than that of single-gate structure in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.

UR - https://www.scopus.com/pages/publications/0842331295

UR - https://www.scopus.com/pages/publications/0842331295#tab=citedBy

M3 - Conference article

AN - SCOPUS:0842331295

SN - 0163-1918

SP - 805

EP - 808

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -