Extending the FETs: Challenges and opportunities for new materials and structures

K. Uchida, T. Takahashi

研究成果: Conference article査読

抄録

Three-dimensional transistors where nanoscale Si films are utilized have attracted great interests because of better short channel immunity. In nanoscale Si, quantum effects on charged carriers become evident and an increase in the electron-phonon scattering rate results in lower thermal conductivity. Therefore, the device designers need to take into account the impact of quantum effects and channel temperature increase on electrical characteristics. In this work, quantum, thermal, and interface effects which are more evident in nano-structures will be reviewed. Then, experimental evaluation of channel temperature increase (ΔTch) due to Joule heating and impact of ΔTch on analog performance of FETs utilizing nanoscale Si film will be shown.

本文言語English
ページ(範囲)3-11
ページ数9
ジャーナルECS Transactions
64
6
DOI
出版ステータスPublished - 2014
外部発表はい
イベント6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2014 10月 52014 10月 9

ASJC Scopus subject areas

  • 工学一般

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