Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro; Takuya Saraya; Toshiro Hiramoto; Toshiaki Ikoma

doi:10.1143/jjap.35.858

Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro, Takuya Saraya, Toshiro Hiramoto, Toshiaki Ikoma

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

本文言語	English
ページ（範囲）	858-860
ページ数	3
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	35
号	2 SUPPL. B
DOI	https://doi.org/10.1143/jjap.35.858
出版ステータス	Published - 1996 2月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.35.858

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abstract = "We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.",

keywords = "MOSFET, Potential fluctuations, Random telegraph signal, Single electron trap, Split-gate",

author = "Hiroki Ishikuro and Takuya Saraya and Toshiro Hiramoto and Toshiaki Ikoma",

year = "1996",

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AU - Ishikuro, Hiroki

AU - Saraya, Takuya

AU - Hiramoto, Toshiro

AU - Ikoma, Toshiaki

PY - 1996/2

Y1 - 1996/2

N2 - We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

AB - We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

KW - MOSFET

KW - Potential fluctuations

KW - Random telegraph signal

KW - Single electron trap

KW - Split-gate

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2 SUPPL. B

ER -

Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

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