We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||2 SUPPL. B|
|出版ステータス||Published - 1996 2月|
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