Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

Hiroki Ishikuro, Takuya Saraya, Toshiro Hiramoto, Toshiaki Ikoma

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We have observed very large amplitude (≈ 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

本文言語English
ページ(範囲)858-860
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
2 SUPPL. B
DOI
出版ステータスPublished - 1996 2月
外部発表はい

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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