抄録
We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.
本文言語 | English |
---|---|
ページ(範囲) | 226-229 |
ページ数 | 4 |
ジャーナル | AIP Conference Proceedings |
巻 | 1583 |
DOI | |
出版ステータス | Published - 2014 |
イベント | 2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China 継続期間: 2014 8月 18 → 2014 8月 22 |
ASJC Scopus subject areas
- 物理学および天文学(全般)