抄録
Floating body effects in 0.15 μm partially-depleted silicon-on-insulator (SOI) MOSFETs are studied at voltages below 1 V. Impact ionization takes place at the drain potential below the band gap energy, causing large transient drain currents even when the supply voltage is less than 1 V as the device is scaled. Thus, the floating body effects remain a serious problem even when the supply voltage is reduced to below 1 V.
| 本文言語 | English |
|---|---|
| ページ | 70-71 |
| ページ数 | 2 |
| 出版ステータス | Published - 1996 |
| 外部発表 | はい |
| イベント | Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA 継続期間: 1996 9月 30 → 1996 10月 3 |
Other
| Other | Proceedings of the 1996 IEEE International SOI Conference |
|---|---|
| City | Sanibel Island, FL, USA |
| Period | 96/9/30 → 96/10/3 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学