Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

J. Tatebayashi, Y. Ota, D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

研究成果: Conference contribution

抄録

We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μe V are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs.

本文言語English
ホスト出版物のタイトルNanowires and Nanotubes - Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials
ページ115-119
ページ数5
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2012 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2012 4月 92012 4月 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1439
ISSN(印刷版)0272-9172

Other

Other2012 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period12/4/912/4/13

ASJC Scopus subject areas

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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