Formation of shallow energy levels in Mn+ implanted GaAs with extremely low background impurity concentration

Honglie Shen, Yunosuke Makita, Akimasa Yamada, Shigeru Niki, Tsutomu Iida, Hajime Shibata, Paul Fons, Akira Obara

研究成果: Conference contribution

1 被引用数 (Scopus)


Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×1019cm-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.

ホスト出版物のタイトルMaterials Synthesis and Processing Using Ion Beams
編集者Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
出版社Publ by Materials Research Society
出版ステータスPublished - 1994 1月 1
イベントProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
継続期間: 1993 11月 291993 12月 3


名前Materials Research Society Symposium Proceedings


ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


「Formation of shallow energy levels in Mn+ implanted GaAs with extremely low background impurity concentration」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。