抄録
A study to investigate the Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films was presented. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600 °C using trifluoroacetic acid. It was observed that the Ga doping increases the cathodoluminescence (CL) intensity of the film, which was attributed to suppression of charge accumulation on the films.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2411-2416 |
| ページ数 | 6 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 94 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 2003 8月 15 |
ASJC Scopus subject areas
- 物理学および天文学（全般）