抄録
The physical and electrochemical properties of boron-doped polycrystalline diamond electrodes, prepared with various B/C ratio, i.e., 0.1%, 0.5% (BDD-A), 1% (BDD-B), and 5% (BDD-C), were investigated. Electrochemical measurements of the heavily boron-doped films (BDD-C) showed giant electric double-layer capacitance and activity which is significantly larger than BDD-A and BDD-B as well as glassy carbon electrodes. However, interestingly, actual boron concentration of BDD-C was observed to be almost the same as that of BDD-B by secondary ion mass spectroscopy (SIMS) and glow discharge optical emission spectroscopy (GDOES) analysis. It is suggested that the large capacitance is due to a few sp2-bonded carbon impurities, which was observed only in BDD-C, although the amount of the sp2-bonded nondiamond species are very small. In the present work, the reason for the interesting electrochemical properties of heavily boron-doped diamond electrodes is discussed. Furthermore, dimensional stability of the electrodes was also confirmed by conducting harsh anodic treatment.
| 本文言語 | English |
|---|---|
| ページ(範囲) | 772-777 |
| ページ数 | 6 |
| ジャーナル | Diamond and Related Materials |
| 巻 | 19 |
| 号 | 7-9 |
| DOI | |
| 出版ステータス | Published - 2010 7月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 化学一般
- 機械工学
- 材料化学
- 電子工学および電気工学
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