TY - JOUR
T1 - Growth and electrical properties of ZnO thin films deposited by novel ion plating method
AU - Iwata, K.
AU - Sakemi, T.
AU - Yamada, A.
AU - Fons, P.
AU - Awai, K.
AU - Yamamoto, T.
AU - Matsubara, M.
AU - Tampo, H.
AU - Niki, S.
N1 - Funding Information:
The authors would like to thank Prof. S. Shirakata, Prof. K. Yoshino, Prof. T. Ikari, Dr T. Yajima, Dr T. Nagase, Dr T. Terasako, Dr K. Nishida and Prof. T. Nakata for discussion. This research was sponsored by the Shikoku consortium grant from the Ministry of Economy, Trade and Industry.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/12/15
Y1 - 2003/12/15
N2 - The URT(Uramoto-gun with Tanaka magnetic field)-IP(ion plating) method is a technique for depositing a thin film on a substrate. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the material properties were evaluated. The quality of ZnO thin films grown by the URT-IP method was found to be sensitive to oxygen supply during growth. It was observed that the saturation point of the growth rate corresponding to the optimum oxygen supply leads to the best electrical properties. The profiles of the dependence of film properties on oxygen supply revealed a part of growth mechanism of the URT-IP method.
AB - The URT(Uramoto-gun with Tanaka magnetic field)-IP(ion plating) method is a technique for depositing a thin film on a substrate. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the material properties were evaluated. The quality of ZnO thin films grown by the URT-IP method was found to be sensitive to oxygen supply during growth. It was observed that the saturation point of the growth rate corresponding to the optimum oxygen supply leads to the best electrical properties. The profiles of the dependence of film properties on oxygen supply revealed a part of growth mechanism of the URT-IP method.
KW - II-VI
KW - Ion plating
KW - Transparent conductive oxide
KW - Zinc oxide
KW - ZnO
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U2 - 10.1016/S0040-6090(03)01160-X
DO - 10.1016/S0040-6090(03)01160-X
M3 - Conference article
AN - SCOPUS:1642401962
SN - 0040-6090
VL - 445
SP - 274
EP - 277
JO - Thin Solid Films
JF - Thin Solid Films
IS - 2
T2 - Proceedings of the 3rd International Symposium on Transparent Oxide
Y2 - 10 April 2003 through 11 April 2003
ER -