Growth of polycrystalline Cu (In,Ga) Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Shogo Ishizuka; Hajime Shibata; Akimasa Yamada; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki

doi:10.1063/1.2766669

Growth of polycrystalline Cu (In,Ga) Se₂ thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Shogo Ishizuka
, Hajime Shibata
, Akimasa Yamada
, Paul Fons
, Keiichiro Sakurai
, Koji Matsubara
, Shigeru Niki

研究成果: Article › 査読

38 被引用数 (Scopus)

抄録

Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

本文言語	English
論文番号	041902
ジャーナル	Applied Physics Letters
巻	91
号	4
DOI	https://doi.org/10.1063/1.2766669
出版ステータス	Published - 2007
外部発表	はい

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ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2766669

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引用スタイル

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abstract = "Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5\%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.",

author = "Shogo Ishizuka and Hajime Shibata and Akimasa Yamada and Paul Fons and Keiichiro Sakurai and Koji Matsubara and Shigeru Niki",

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AU - Ishizuka, Shogo

AU - Shibata, Hajime

AU - Yamada, Akimasa

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Matsubara, Koji

AU - Niki, Shigeru

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AB - Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

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