The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.
|ジャーナル||Applied Surface Science|
|出版ステータス||Published - 2005 5月 15|
|イベント||12th International Conference on Solid Films and Surfaces - Hammatsu, Japan|
継続期間: 2004 6月 21 → 2004 6月 25
ASJC Scopus subject areas
- 化学 (全般)