本文言語 | English |
---|---|
ページ(範囲) | 462-463 |
ページ数 | 2 |
ジャーナル | IEEE Transactions on Plasma Science |
巻 | 31 |
号 | 4 II |
DOI | |
出版ステータス | Published - 2003 8月 |
外部発表 | はい |
ASJC Scopus subject areas
- 核物理学および高エネルギー物理学
- 凝縮系物理学
引用スタイル
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS
In: IEEE Transactions on Plasma Science, Vol. 31, No. 4 II, 08.2003, p. 462-463.
研究成果: Editorial › 査読
}
TY - JOUR
T1 - Guest editorial special issue on modeling and simulation of collisional or near-collisionless low-temperature plasmas
AU - Economou, Demetre J.
AU - Meyyappan, M.
AU - Makabe, Toshiaki
N1 - Funding Information: Toshiaki Makabe was born in Japan in 1947. He received the B.S., M.S., and Ph.D. degrees in electrical engineering from Keio University, Tokyo, Japan, in 1970, 1972, and 1975, respectively. In 1975, he became an Instructor of electrical engineering at Keio University, where he has been a Professor in the Department of Electronics and Electrical Engineering since 1991 and had bee Head of the department from 1996 to 2000. Currently, he is the Director of the Graduate School of Integrated Design Engineering. His research field is in plasma electronics closely re-lated to low-temperature, nonequilibrium plasmas for material processing, and to the electron(ion) swarm transport theory based on the Boltzmann equation. His recent research interests are in the computational design of the plasma source interacting with wall(wafer) and of a damage free plasma etching. He developed a vertically integrated computer-aided design for device processing (VicAddress) in 2000. VicAddress will be expected to predict and design a plasma structure and trench(hole) etching on a wafer, and to predict an electrical damage to lowernano-scale-elements under charging in future plasma etching. In addition, three-dimensional emission (absorption)-selected computerized tomography (CT) of a low-temperature plasma has been established in his laboratory, and the CT images form a counterpart in the numerical prediction. These projects have been supported by the Semiconductor Technology Academic Research Center (STARC), the Association of Super-Advanced Electronics Technologies (ASET), and Semiconductor Leading Edge Technologies(Selete). Recently, he organized the 21st century COE program for optical and electronic device technology for access network. He is the author of Gaseous Electronics and Its Applications (Norwell, MA: Kluwer; 1991), Plasma Electronics (in Japanese) (Tokyo, Japan: Baifukan; 1999), and Advances in Low Temperature RF Plasmas; Basis for Process Design (Amsterdam, The Netherlands: North-Holland; 2002). He has published more than 130 journal papers and presented more than 250 conference papers. He had the opportunity to give his invited talk at more than 35 International Conferences. He granted 16 Ph.D. degrees to his students in the field of plasma electronics. Dr. Makabe is a Fellow of the Institute of Physics. He has been a Guest Editor of special issues relevant to low-temperature plasmas and related surface processes in the IEEE TRANSACTIONS ON PLASMA SCIENCE, Japanese Journal of Applied Physics, Australian Journal of Physics, the Journal of Vacuum Science and Technology A, and Applied Surface Science. He was on the editorial board of Japanese Journal of Applied Physics and the Transactions of the Institute of Electrical Engineers of Japan. Currently, he is on the Editorial board of Plasma Sources Science and Technology, and The Journal of Physics, D: Applied Physics. He served as the Division Chairman of Plasma Electronics in the Japan Society of Applied Physics. He was the Co-Chair of the Maui Joint Conference between International Conference on Reactive Plasmas (Japan) and Gaseous Electronics Conference (USA).
PY - 2003/8
Y1 - 2003/8
UR - http://www.scopus.com/inward/record.url?scp=0042929688&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0042929688&partnerID=8YFLogxK
U2 - 10.1109/TPS.2003.816898
DO - 10.1109/TPS.2003.816898
M3 - Editorial
AN - SCOPUS:0042929688
SN - 0093-3813
VL - 31
SP - 462
EP - 463
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 4 II
ER -