TY - GEN
T1 - High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel
AU - Saitoh, Masumi
AU - Ota, Kensuke
AU - Tanaka, Chika
AU - Nakabayashi, Yukio
AU - Uchida, Ken
AU - Numata, Toshinori
PY - 2011
Y1 - 2011
N2 - Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.
AB - Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.
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U2 - 10.1109/ISDRS.2011.6135145
DO - 10.1109/ISDRS.2011.6135145
M3 - Conference contribution
AN - SCOPUS:84857221503
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
Y2 - 7 December 2011 through 9 December 2011
ER -