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High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

  • Kohei M. Itoh
  • , Jiro Kato
  • , Masafumi Uemura
  • , Alexey K. Kaliteevskii
  • , Oleg N. Godisov
  • , Grigori G. Devyatych
  • , Andrey D. Bulanov
  • , Anatoli V. Gusev
  • , Igor D. Kovalev
  • , Pyotr G. Sennikov
  • , Hans J. Pohl
  • , Nikolai V. Abrosimov
  • , Helge Riemann

研究成果: Article › 査読

抄録

We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

本文言語English
ページ(範囲)6248-6251
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻42
号10
DOI
出版ステータスPublished - 2003 10月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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