High-Quality Transparent Conducting Oxide Films Deposited by a Novel Ion Plating Technique

T. Sakemi, S. Shirakata, K. Iwata, K. Matsubara, H. Tampo, P. Fons, S. Niki, K. Awai, T. Yamamoto

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

A novel ion plating technique that has the attributes of both superb controllability of the high density plasma used as well as ion beam shape has been developed and applied to the deposition of transparent conducting oxides. The advantages of this technique include reduced ion damage, scale-up capability, in-plane uniformity, the use of low growth temperatures and fast deposition rates suggesting that the technique is very promising for a variety of applications such as solar cells and organic device fabrication. Gallium doped zinc oxide films have been deposited on glass substrates at 200°C. Resistivities as low as ρ∼2.7×10-4Ω-cm with high transparency have been demonstrated. In addition, this technique has been successfully applied to large area deposition such as 65 cm × 55 cm-sized glass substrates.

本文言語English
ページ(範囲)301-306
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
763
出版ステータスPublished - 2003 12月 8
外部発表はい
イベントMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
継続期間: 2003 4月 222003 4月 25

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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