Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, V. I. Ozhogin

研究成果: Article査読

107 被引用数 (Scopus)

抄録

We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

本文言語English
ページ(範囲)4058-4061
ページ数4
ジャーナルPhysical review letters
77
19
DOI
出版ステータスPublished - 1996

ASJC Scopus subject areas

  • 物理学および天文学一般

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