Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara; H. Tsuda; K. Tateno; S. Matsuo; T. Kurokawa

doi:10.1049/el:19980928

Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara
, H. Tsuda
, K. Tateno
, S. Matsuo
, T. Kurokawa

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

本文言語	English
ページ（範囲）	1352-1353
ページ数	2
ジャーナル	Electronics Letters
巻	34
号	13
DOI	https://doi.org/10.1049/el:19980928
出版ステータス	Published - 1998 6月 25
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19980928

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引用スタイル

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abstract = "GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.",

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Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

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