Imaginary impedance due to hopping phenomena and evaluation of dopant ionization time in cryogenic metal-oxide-semiconductor devices on highly doped substrate

Tomohisa Miyao, Keito Yoshinaga, Takahisa Tanaka, Hiroki Ishikuro, Munehiro Tada, Ken Uchida

研究成果: Article査読

抄録

MOS capacitors fabricated on substrates with doping concentrations as high as 1018 cm−3 were characterized at 4.2 K. The highly doped substrate exhibited an intrinsic imaginary component of impedance at 4.2 K. The imaginary component is attributed to the time delay induced by hopping phenomena, leading to a decrease in the gate capacitance. Furthermore, we investigated the time constant associated with dopant ionization under depletion conditions and determined it to be 0.35 μs. An equivalent circuit model of the highly doped substrate at 4.2 K is also shown.

本文言語English
論文番号051001
ジャーナルApplied Physics Express
17
5
DOI
出版ステータスPublished - 2024 5月 1

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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