Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara; Kentaro Tamura; Mitsuhiko Sakai; Daisuke Nakagawa; Norikazu Ito; Masayuki Sonobe; Hidemi Takasu; Hitoshi Tampo; Paul Fons; Koji Matsubara; Kakuya Iwata; Akimasa Yamada; Shigeru Niki

doi:10.1143/jjap.43.l180

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai, Daisuke Nakagawa, Norikazu Ito, Masayuki Sonobe, Hidemi Takasu, Hitoshi Tampo, Paul Fons, Koji Matsubara, Kakuya Iwata, Akimasa Yamada, Shigeru Niki

研究成果: Article › 査読

66 被引用数 (Scopus)

抄録

Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of ρ = 2 - 4 × 10^-4 Ω-cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80h in high humidity and high temperature environments.

本文言語	English
ページ（範囲）	L180-L182
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	43
号	2 A
DOI	https://doi.org/10.1143/jjap.43.l180
出版ステータス	Published - 2004 2月 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.43.l180

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Nakahara, K., Tamura, K., Sakai, M., Nakagawa, D., Ito, N., Sonobe, M., Takasu, H., Tampo, H., Fons, P., Matsubara, K., Iwata, K., Yamada, A., & Niki, S. (2004). Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes. Japanese Journal of Applied Physics, Part 2: Letters, 43(2 A), L180-L182. https://doi.org/10.1143/jjap.43.l180

Nakahara, K, Tamura, K, Sakai, M, Nakagawa, D, Ito, N, Sonobe, M, Takasu, H, Tampo, H, Fons, P, Matsubara, K, Iwata, K, Yamada, A & Niki, S 2004, 'Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes', Japanese Journal of Applied Physics, Part 2: Letters, vol. 43, no. 2 A, pp. L180-L182. https://doi.org/10.1143/jjap.43.l180

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title = "Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes",

abstract = "Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of ρ = 2 - 4 × 10-4 Ω-cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80h in high humidity and high temperature environments.",

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AU - Nakahara, Ken

AU - Tamura, Kentaro

AU - Sakai, Mitsuhiko

AU - Nakagawa, Daisuke

AU - Ito, Norikazu

AU - Sonobe, Masayuki

AU - Takasu, Hidemi

AU - Tampo, Hitoshi

AU - Fons, Paul

AU - Matsubara, Koji

AU - Iwata, Kakuya

AU - Yamada, Akimasa

AU - Niki, Shigeru

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N2 - Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of ρ = 2 - 4 × 10-4 Ω-cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80h in high humidity and high temperature environments.

AB - Transparent conductive Ga-doped ZnO (ZnO:Ga) was fabricated to serve as p-contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As-grown ZnO:Ga films typically have resistivities of ρ = 2 - 4 × 10-4 Ω-cm, and over 80% transparency in the near UV and visible wavelength ranges. The current-voltage characteristics between as-grown ZnO:Ga contacts and p-GaN layers were ohmic. The brightness of LEDs fabricated with ZnO:Ga p-contacts was nearly double compared to LEDs with conventional Ni/Au p-contacts. We obtained the external efficiency as high as 20.8% in the case of the near UV LED. The forward voltage at 20mA was found not to increase even after the lamp LED with ZnO:Ga were kept for 80h in high humidity and high temperature environments.

KW - External efficiency

KW - GaN

KW - InGaN

KW - LED

KW - MBE

KW - Ohmic contact

KW - Reliability

KW - Transparent

KW - ZnO

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Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

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