Improved Placement Precision of Donor Spin Qubits in Silicon using Molecule Ion Implantation

Danielle Holmes, Benjamin Wilhelm, Alexander M. Jakob, Xi Yu, Fay E. Hudson, Kohei M. Itoh, Andrew S. Dzurak, David N. Jamieson, Andrea Morello

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Donor spins in silicon-28 are among the best performing qubits in the solid state, offering unmatched coherence times, gate fidelities beyond 99% and the ability to fabricate arrays using deterministic ion implantation. Donor placement precision is improved upon, advantageous for qubit readout and coupling, by implanting molecule ions that carry bystander atoms to boost the detection confidence. Here, the suitability of phosphorus difluoride ((Formula presented.)) molecule ions is demonstrated to fabricate (Formula presented.) donor qubits. Using secondary ion mass spectrometry, it is confirmed that (Formula presented.) (nuclear spin (Formula presented.)) diffuses away from the implant site while (Formula presented.) remains close to its original location during a donor activation anneal. Electron spin resonance measurements are then performed on (Formula presented.) -implanted qubit devices. A pure dephasing time of (Formula presented.) and a coherence time of (Formula presented.) are extracted for the P donor electron- values comparable to those found in conventional atomic (Formula presented.) -implanted qubit devices. Additionally, the P donor electron is not found to hyperfine couple to any (Formula presented.) nuclear spins in its vicinity. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits.

本文言語English
論文番号2300316
ジャーナルAdvanced Quantum Technologies
7
3
DOI
出版ステータスPublished - 2024 3月

ASJC Scopus subject areas

  • 統計物理学および非線形物理学
  • 電子材料、光学材料、および磁性材料
  • 核物理学および高エネルギー物理学
  • 数理物理学
  • 凝縮系物理学
  • 計算理論と計算数学
  • 電子工学および電気工学

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