Improvement in the aspect ratio of fabricated minute dots by the volume change thermal lithography technique

M. Kuwahara, J. H. Kim, P. Fons, J. Tominaga

研究成果: Conference article査読

3 被引用数 (Scopus)


Volume change thermal lithography has been developed as a low cost and simple lithography technique for application in optical mastering. The combination of the temperature distribution induced by a focused laser spot with a Gaussian distribution and a special multilayer consisting of TbFeCo and ZnS-SiO2 are utilized. Application of heat to these materials induces interdiffusion and as a result local volume expansion leading to the formation of a convex surface region. This technique was used to fabricate nano-dots with dimensions less them 100 nm on the sample surface. Typical nano-dot height, however, was less than 20 nm and this value is not sufficient for the pit height of an optical master disk. To address this problem, a PtOx film was inserted between the TbFeCo and ZnS-SiO2 layers. Laser irradiated PtOx decomposed to Pt and oxygen leading to additional surface protrusion due to the combination of the thermally induced interdiffusion of the TbFeCo and ZnS-SiO2 region and PtOx decomposition induced compressive stress. Nano-dots of 110 nm diameter and 37 nm height were successfully fabricated. Transmission electron microscope (TEM) observations of the nano-dot structure are reported.

ジャーナルMicroelectronic Engineering
出版ステータスPublished - 2005 3月
イベントProceedings of the 30th International Conference on Micro- and Nano-Engineering -
継続期間: 2004 9月 192004 9月 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学


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