Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, H. Takasu

研究成果: Conference article査読

54 被引用数 (Scopus)

抄録

We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.

本文言語English
ページ(範囲)287-292
ページ数6
ジャーナルPhysica Status Solidi (A) Applied Research
180
1
DOI
出版ステータスPublished - 2000 7月
外部発表はい
イベント3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
継続期間: 2000 3月 62000 3月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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