TY - GEN
T1 - Influence of crystal's nominal figure of merit on Ti:sapphire laser directly pumped by InGaN laser diodes
AU - Sugiyama, Naoto
AU - Sawada, Ryota
AU - Tanaka, Hiroki
AU - Kannari, Fumihiko
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/25
Y1 - 2017/10/25
N2 - We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
AB - We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
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U2 - 10.1364/CLEO_AT.2017.JW2A.91
DO - 10.1364/CLEO_AT.2017.JW2A.91
M3 - Conference contribution
AN - SCOPUS:85044215909
T3 - 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
SP - 1
EP - 2
BT - 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 Conference on Lasers and Electro-Optics, CLEO 2017
Y2 - 14 May 2017 through 19 May 2017
ER -