TY - GEN
T1 - Infrared Photodetector with Copper Resonator in Silicon Nanohole Array
AU - Yasunaga, Shun
AU - Kan, Tetsuo
AU - Takahashi, Hidetoshi
AU - Takahata, Tomoyuki
AU - Shimoyama, Isao
PY - 2019/6
Y1 - 2019/6
N2 - A silicon-based infrared photodetector with metal nanostructures has been drawing attention, while lacking sufficient responsivity. We hereby present a silicon-based infrared photodetector furnished with an array of a nano-scale copper plate which induces localized surface plasmon resonance (LSPR). Each plate is placed at the bottom of a nanohole on a silicon substrate. This device possesses two features: electrically-connected copper resonators and backside-illuminating configuration. They lead to efficient photocurrent generation. As LSPR couples with vertically incident light, this structure can be a solution of realizing a silicon-based infrared photodetector that can be adapted to prevalent semiconductor devices.
AB - A silicon-based infrared photodetector with metal nanostructures has been drawing attention, while lacking sufficient responsivity. We hereby present a silicon-based infrared photodetector furnished with an array of a nano-scale copper plate which induces localized surface plasmon resonance (LSPR). Each plate is placed at the bottom of a nanohole on a silicon substrate. This device possesses two features: electrically-connected copper resonators and backside-illuminating configuration. They lead to efficient photocurrent generation. As LSPR couples with vertically incident light, this structure can be a solution of realizing a silicon-based infrared photodetector that can be adapted to prevalent semiconductor devices.
KW - Infrared photodetector
KW - Schottky junction
KW - backside illumination
KW - localized surface plasmon resonance
UR - http://www.scopus.com/inward/record.url?scp=85071929111&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071929111&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2019.8808478
DO - 10.1109/TRANSDUCERS.2019.8808478
M3 - Conference contribution
AN - SCOPUS:85071929111
T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
SP - 633
EP - 636
BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Y2 - 23 June 2019 through 27 June 2019
ER -