抄録
In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 14905-14908 |
| ページ数 | 4 |
| ジャーナル | Chemical Communications |
| 巻 | 56 |
| 号 | 94 |
| DOI | |
| 出版ステータス | Published - 2020 12月 7 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 化学一般
- セラミックおよび複合材料
- 金属および合金
- 材料化学
- 表面、皮膜および薄膜
- 触媒