Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng, E. Ohta, M. Sakata

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

本文言語English
ページ(範囲)2206-2207
ページ数2
ジャーナルApplied Physics Letters
51
26
DOI
出版ステータスPublished - 1987

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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