Interface induced inverse spin Hall effect in bismuth/permalloy bilayer

Dazhi Hou, Z. Qiu, K. Harii, Y. Kajiwara, K. Uchida, Y. Fujikawa, H. Nakayama, T. Yoshino, T. An, K. Ando, Xiaofeng Jin, E. Saitoh

研究成果: Article査読

80 被引用数 (Scopus)

抄録

Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I c quantitatively, in which spin transport modulation near Bi/Py interface is considered.

本文言語English
論文番号042403
ジャーナルApplied Physics Letters
101
4
DOI
出版ステータスPublished - 2012 7月 23
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Interface induced inverse spin Hall effect in bismuth/permalloy bilayer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル