Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda; E. Ohta

doi:10.1063/1.108111

Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda, E. Ohta

物理情報工学科

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

A new electron trap at E_c-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

本文言語	English
ページ（範囲）	2691-2693
ページ数	3
ジャーナル	Applied Physics Letters
巻	61
号	22
DOI	https://doi.org/10.1063/1.108111
出版ステータス	Published - 1992

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.108111

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AB - A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

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Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

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