Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara; K. Tateno; T. Kagawa; Y. Ohiso; H. Tsuda; T. Kurokawa; C. Amano

doi:10.1049/el:19990034

Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara
, K. Tateno
, T. Kagawa
, Y. Ohiso
, H. Tsuda
, T. Kurokawa
, C. Amano

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

本文言語	English
ページ（範囲）	45-46
ページ数	2
ジャーナル	Electronics Letters
巻	35
号	1
DOI	https://doi.org/10.1049/el:19990034
出版ステータス	Published - 1999 1月 7
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19990034

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引用スタイル

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AU - Tateno, K.

AU - Kagawa, T.

AU - Ohiso, Y.

AU - Tsuda, H.

AU - Kurokawa, T.

AU - Amano, C.

PY - 1999/1/7

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AB - The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

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