TY - JOUR
T1 - Investigation of heterostructure between diamond and iridium on sapphire
AU - Samoto, A.
AU - Ito, S.
AU - Hotta, A.
AU - Hasebe, T.
AU - Ando, Y.
AU - Sawabe, A.
AU - Suzuki, T.
PY - 2008/7
Y1 - 2008/7
N2 - Diamond thin film has outstanding physical and chemical properties. Diamond-on-iridium configurations have been prepared by several methods, such as microwave enhanced plasma CVD, direct currency plasma CVD, and hot filament CVD. In this study, an Ir interlayer was deposited on single crystal sapphires (Al2O3) with A-planes {1120} by an RF magnetron sputtering method after annealing samples. In addition, a diamond thin film was deposited by a microwave enhanced plasma chemical vapor deposition (MPCVD) method using a mixture of hydrogen and methane gases after a bias enhanced nucleation (BEN) procedure. Ir (001) was grown on the A-plane of sapphire by X-ray pole figure measurement. Diamond thin films were synthesized on each Ir/sapphire substrate and characterized by SEM, Raman spectroscopy. D {100} faces were exhibited in substantial areas of diamond films, and a flat D {100} plane was partially obtained. It is considered that diamond thin films on Ir {100} were mainly grown towards the <100> direction and were epitaxially grown in part.
AB - Diamond thin film has outstanding physical and chemical properties. Diamond-on-iridium configurations have been prepared by several methods, such as microwave enhanced plasma CVD, direct currency plasma CVD, and hot filament CVD. In this study, an Ir interlayer was deposited on single crystal sapphires (Al2O3) with A-planes {1120} by an RF magnetron sputtering method after annealing samples. In addition, a diamond thin film was deposited by a microwave enhanced plasma chemical vapor deposition (MPCVD) method using a mixture of hydrogen and methane gases after a bias enhanced nucleation (BEN) procedure. Ir (001) was grown on the A-plane of sapphire by X-ray pole figure measurement. Diamond thin films were synthesized on each Ir/sapphire substrate and characterized by SEM, Raman spectroscopy. D {100} faces were exhibited in substantial areas of diamond films, and a flat D {100} plane was partially obtained. It is considered that diamond thin films on Ir {100} were mainly grown towards the <100> direction and were epitaxially grown in part.
KW - Heteroepitaxy
KW - Iridium
KW - MPCVD
KW - Sapphire
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U2 - 10.1016/j.diamond.2008.02.007
DO - 10.1016/j.diamond.2008.02.007
M3 - Article
AN - SCOPUS:48949088458
SN - 0925-9635
VL - 17
SP - 1039
EP - 1044
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 7-10
ER -