Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi; Masumi Saitoh; Ken Uchida

doi:10.1109/VLSIT.2008.4588569

I_d fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

研究成果: Conference contribution

17 被引用数 (Scopus)

抄録

Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO₂ pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI _d/I_d) by the surface holes is smaller in high-κ pFETs, comparing to the SiO₂ pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade I_d. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

本文言語	English
ホスト出版物のタイトル	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
ページ	78-79
ページ数	2
DOI	https://doi.org/10.1109/VLSIT.2008.4588569
出版ステータス	Published - 2008
外部発表	はい
イベント	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States 継続期間: 2008 6月 17 → 2008 6月 19

出版物シリーズ

名前	Digest of Technical Papers - Symposium on VLSI Technology
ISSN（印刷版）	0743-1562

Other

Other	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
国/地域	United States
City	Honolulu, HI
Period	08/6/17 → 08/6/19

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/VLSIT.2008.4588569

他のファイルとリンク

引用スタイル

Kobayashi, S, Saitoh, M & Uchida, K 2008, I_d fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. in 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT., 4588569, Digest of Technical Papers - Symposium on VLSI Technology, pp. 78-79, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, Honolulu, HI, United States, 08/6/17. https://doi.org/10.1109/VLSIT.2008.4588569

@inproceedings{7fb7773cd8734cd2a22abece7388da72,

title = "Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs",

abstract = "Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.",

author = "Shigeki Kobayashi and Masumi Saitoh and Ken Uchida",

year = "2008",

doi = "10.1109/VLSIT.2008.4588569",

language = "English",

isbn = "9781424418053",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "78--79",

booktitle = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT",

note = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT ; Conference date: 17-06-2008 Through 19-06-2008",

}

TY - GEN

T1 - Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

AU - Kobayashi, Shigeki

AU - Saitoh, Masumi

AU - Uchida, Ken

PY - 2008

Y1 - 2008

N2 - Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

AB - Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=51949105030&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51949105030&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2008.4588569

DO - 10.1109/VLSIT.2008.4588569

M3 - Conference contribution

AN - SCOPUS:51949105030

SN - 9781424418053

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 78

EP - 79

BT - 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT

T2 - 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT

Y2 - 17 June 2008 through 19 June 2008

ER -