Kinking and Cracking Caused by Slip in Single Crystals of Silicon Carbide

α‐SiC single crystals were compressed parallel to the basal plane, (0001), at temperatures between 900° and 1500°C. Plastic deformation by slip on the basal planes which accompanied kinking occurred above 1000°C. At kink boundaries, two kinds of cracks were observed. One was the cracks elongated parallel to the basal plane. This kind of crack was initiated by the tensile stress produced by piled‐up dislocations on the basal planes against a kink boundary. The other was on a kink boundary, and was induced by the stress of dislocations, heterogeneously distributed on the kink boundary. The initiation of cracks produced by dislocations was considered to be a possible cause of fracture in polycrystalline SiC at high temperatures.