Laser-induced desorption in compound semiconductors has been investigated using a dynamic mass spectroscopic method. When the target material was characterized by its bond ionicity fi, as scaled by Phillips , the observed threshold fluence shows a good decreasing correlation with fi. The concept of the fi dependent structural instability, which is well established in the ground state , was extended to the electronically excited system. A model is proposed for laser sputtering in tetrahedrally bonded materials based on a phase transition mechanism under a dense electron-hole plasma, which involves a dimerization interaction between nonmetallic elements.
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