TY - JOUR
T1 - Laser-induced desorption from compound semiconductors
AU - Ichige, K.
AU - Matsumoto, Y.
AU - Namiki, A.
PY - 1988/6/2
Y1 - 1988/6/2
N2 - Laser-induced desorption in compound semiconductors has been investigated using a dynamic mass spectroscopic method. When the target material was characterized by its bond ionicity fi, as scaled by Phillips [13], the observed threshold fluence shows a good decreasing correlation with fi. The concept of the fi dependent structural instability, which is well established in the ground state [13], was extended to the electronically excited system. A model is proposed for laser sputtering in tetrahedrally bonded materials based on a phase transition mechanism under a dense electron-hole plasma, which involves a dimerization interaction between nonmetallic elements.
AB - Laser-induced desorption in compound semiconductors has been investigated using a dynamic mass spectroscopic method. When the target material was characterized by its bond ionicity fi, as scaled by Phillips [13], the observed threshold fluence shows a good decreasing correlation with fi. The concept of the fi dependent structural instability, which is well established in the ground state [13], was extended to the electronically excited system. A model is proposed for laser sputtering in tetrahedrally bonded materials based on a phase transition mechanism under a dense electron-hole plasma, which involves a dimerization interaction between nonmetallic elements.
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U2 - 10.1016/0168-583X(88)90690-8
DO - 10.1016/0168-583X(88)90690-8
M3 - Article
AN - SCOPUS:0024018927
SN - 0168-583X
VL - 33
SP - 820
EP - 823
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-4
ER -