Linewidth of low-field electrically detected magnetic resonance of phosphorus in isotopically controlled silicon

Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S. Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans J. Pohl, Mike L.W. Thewalt, Martin S. Brandt, Kohei M. Itoh

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.

本文言語English
論文番号21302
ジャーナルApplied Physics Express
4
2
DOI
出版ステータスPublished - 2011 2月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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