Low-density inas quantum dots grown on InP(001) using solid-source molecular beam epitaxy with a post-growth annealing process

Ryosuke Kubota, Toshiharu Saiki, Philippe Regreny, Aziz Benamrouche, Michel Gendry

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Low-density InAs quantum dots (QDs) with a large lateral size were grown on InP(001) by solid-source molecular beam epitaxy with a post-growth annealing process. A decrease in QD density with the amount of InAs deposited was shown by atomic force microscopy, and a density of 5 × 108 QDs/cm 2 was obtained for 0.8 monolayer InAs deposition. Moreover, we found that the growth mechanism of QDs changed significantly depending on the amount of InAs deposited in the vicinity of critical thickness, even if the same annealing condition was applied. Near-field photoluminescence spectroscopy of single QDs demonstrated the high optical qualities of low-density QDs.

本文言語English
ページ(範囲)412011-412014
ページ数4
ジャーナルJapanese journal of applied physics
49
4 PART 1
DOI
出版ステータスPublished - 2010 4月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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