抄録
A low loss, small crosstalk offset crossing structure for a Si wire waveguide is proposed. We analyzed the properties of the structure for both the TE and TM modes by 2-D FDTD (two-dimensional finite difference time domain) simulation. By optimizing the offset crossing structure, a transmission loss of 0.021dB, and crosstalk of -55.0dB was achieved with a crossing angle of 20 degrees for the TE mode. A transmission loss of 0.070dB, and crosstalk of -48.6dB was also achieved with the same crossing angle for the TM mode. The low losses achieved with a small crossing angle makes this structure very useful for highly integrated optical matrix switches, etc.
本文言語 | English |
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ページ(範囲) | 407-411 |
ページ数 | 5 |
ジャーナル | IEICE Electronics Express |
巻 | 6 |
号 | 7 |
DOI | |
出版ステータス | Published - 2009 4月 10 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学