Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

Y. Kusano; H. Saito; L. S. Vlasenko; M. P. Vlasenko; Eiji Ohta; K. M. Itoh

doi:10.1063/1.4938199

Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

Y. Kusano, H. Saito, L. S. Vlasenko, M. P. Vlasenko, Eiji Ohta, K. M. Itoh

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研究成果: Article › 査読

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Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

本文言語	English
論文番号	245703
ジャーナル	Journal of Applied Physics
巻	118
号	24
DOI	https://doi.org/10.1063/1.4938199
出版ステータス	Published - 2015 12月 28

ASJC Scopus subject areas

物理学および天文学一般

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10.1063/1.4938199

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title = "Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon",

abstract = "Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.",

author = "Y. Kusano and H. Saito and Vlasenko, {L. S.} and Vlasenko, {M. P.} and Eiji Ohta and Itoh, {K. M.}",

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T1 - Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

AU - Kusano, Y.

AU - Saito, H.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Ohta, Eiji

AU - Itoh, K. M.

PY - 2015/12/28

Y1 - 2015/12/28

N2 - Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

AB - Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

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Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

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