@inproceedings{a57c14975d9648b4a17a90f1d6d85088,
title = "Low temperature boron activation in amorphous germanium for three dimensional integrated circuits (3D-ICs) using Ni-induced crystallization",
abstract = "In this work, we present very low temperature boron activation technique in amorphous (α)-Ge using Ni-induced crystallization. Ni not only successfully crystallize α-Ge film, it also facilitates activation of the respective boron atoms in the α-Ge during the crystallization process at temperatures as low as 360°C. The feasibility of the low temperature activation technique has successfully been demonstrated for a Ge gate electrode in a Si PMOSFET using Schottky Ni silicide source/drain.",
author = "Park, \{Jin Hong\} and M. Tada and Yu, \{H. Y.\} and D. Kuzum and Y. Na and Saraswat, \{K. C.\}",
year = "2009",
doi = "10.1149/1.2986852",
language = "English",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "909--916",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}