TY - JOUR
T1 - Metal-induced gap states in epitaxial organic-insulator/metal interfaces
AU - Kiguchi, Manabu
AU - Arita, Ryotaro
AU - Yoshikawa, Genki
AU - Tanida, Yoshiaki
AU - Ikeda, Susumu
AU - Entani, Shiro
AU - Nakai, Ikuyo
AU - Kondoh, Hiroshi
AU - Ohta, Toshiaki
AU - Saiki, Koichiro
AU - Aoki, Hideo
PY - 2005/8/15
Y1 - 2005/8/15
N2 - We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.
AB - We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.
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U2 - 10.1103/PhysRevB.72.075446
DO - 10.1103/PhysRevB.72.075446
M3 - Article
AN - SCOPUS:33644966196
SN - 1098-0121
VL - 72
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 7
M1 - 075446
ER -