Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Manabu Kiguchi; Ryotaro Arita; Genki Yoshikawa; Yoshiaki Tanida; Susumu Ikeda; Shiro Entani; Ikuyo Nakai; Hiroshi Kondoh; Toshiaki Ohta; Koichiro Saiki; Hideo Aoki

doi:10.1103/PhysRevB.72.075446

Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Manabu Kiguchi
, Ryotaro Arita
, Genki Yoshikawa
, Yoshiaki Tanida
, Susumu Ikeda
, Shiro Entani
, Ikuyo Nakai
, Hiroshi Kondoh
, Toshiaki Ohta
, Koichiro Saiki
, Hideo Aoki

研究成果: Article › 査読

21 被引用数 (Scopus)

抄録

We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

本文言語	English
論文番号	075446
ジャーナル	Physical Review B - Condensed Matter and Materials Physics
巻	72
号	7
DOI	https://doi.org/10.1103/PhysRevB.72.075446
出版ステータス	Published - 2005 8月 15
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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AU - Kiguchi, Manabu

AU - Arita, Ryotaro

AU - Yoshikawa, Genki

AU - Tanida, Yoshiaki

AU - Ikeda, Susumu

AU - Entani, Shiro

AU - Nakai, Ikuyo

AU - Kondoh, Hiroshi

AU - Ohta, Toshiaki

AU - Saiki, Koichiro

AU - Aoki, Hideo

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

AB - We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

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JO - Physical Review B - Condensed Matter and Materials Physics

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Metal-induced gap states in epitaxial organic-insulator/metal interfaces

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