Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Ulrich Gösele

研究成果: Article査読

70 被引用数 (Scopus)

抄録

A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.

本文言語English
ページ(範囲)876-878
ページ数3
ジャーナルApplied Physics Letters
84
6
DOI
出版ステータスPublished - 2004 2月 9

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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