Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

Y. Awano; K. Tomizawa; N. Hashizume; M. Kawashima

doi:10.1049/el:19820089

Monte Carlo particle simulation of GaAs submicron n⁺-i-n⁺ diode

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

研究成果: Article › 査読

24 被引用数 (Scopus)

抄録

Monte Carlo particle simulation of a GaAs submicron n⁺-i-n⁺ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 10⁸ cms^-1 was observed at certain conditions. Effects of the electron backscattering from the anode n⁺-layer are also discussed.

本文言語	English
ページ（範囲）	133-135
ページ数	3
ジャーナル	Electronics Letters
巻	18
号	3
DOI	https://doi.org/10.1049/el:19820089
出版ステータス	Published - 1982 2月 4
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19820089

他のファイルとリンク

引用スタイル

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