Monte Carlo simulations of high-carrier-velocity acceleration in graphene field-effect transistors by local channel width modulation

Aizuddin Mohamad, Naoki Harada, Yuji Awano

    研究成果: Article査読

    2 被引用数 (Scopus)

    抄録

    We propose a new graphene field-effect transistor structure with local channel width modulation (modulated channel width, MCW-GFET). The channel has notches at the source side under the gate to increase the electric field. We simulate its electrical properties for the first time using the Monte Carlo particle method. Compared with that in the conventional GFET, the local mean velocity in the MCW-GFET can be twice higher, leading to a 30% shorter transit time and a 50% shorter local transit time near the source region without changing the threshold voltage of the FET. Therefore, developing GFETs with various structural designs seems promising for high-performance devices.

    本文言語English
    論文番号45102
    ジャーナルApplied Physics Express
    5
    4
    DOI
    出版ステータスPublished - 2012 4月 1

    ASJC Scopus subject areas

    • 工学一般
    • 物理学および天文学一般

    フィンガープリント

    「Monte Carlo simulations of high-carrier-velocity acceleration in graphene field-effect transistors by local channel width modulation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル